Research Publications

For a list of publications since 2005, click here.

I. Journal Articles

  1. J. Kolodzey, "CRAY-1 computer technology," IEEE Trans. on Components, Hybrids, and Manufacturing Technology, vol. CHMT-4, pp. 181-186, June 1981.
  2. J. Kolodzey, D. Slobodin, S. Aljishi, S. Quinlan, R. Schwarz, D.-S. Shen, P.M. Fauchet and S. Wagner, "Transport properties of a-Si,Ge:H alloys prepared from SiF4, GeF4, and H2 in R.F. or D.C. glow discharges," J. Non-Crystalline Solids, vol. 77 & 78, pp. 897-900, 1985.
  3. J. Kolodzey, S. Aljishi, R. Schwarz, D.-S. Shen, I. H. Campbell, P.M. Fauchet, S. A. Lyon and S. Wagner, "Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys," Superlattices and Microstructures, vol. 2, pp. 391-396, 1986.
  4. C.-L. Chiang, R. Schwarz, D. Slobodin, J. Kolodzey and S. Wagner, "Measurements of the minority carrier diffusion length in thin semiconductor films," IEEE Trans. Electron Devices, vol. ED-33, pp. 1587-1592, 1986.
  5. P.M. Fauchet, D. Hulin, A. Migus, A. Antonetti, J. Kolodzey and S. Wagner, "Initial stages of trapping in a-Si:H observed by femtosecond spectroscopy," Phys. Rev. Lett., vol. 57, pp. 2438-2441, 1986.
  6. J. Kolodzey, S. Aljishi, R. Schwarz, D. Slobodin and S. Wagner, "Properties of a-Si,Ge:H,F alloys prepared by RF glow discharge in a UHV reactor," J. Vac. Sci. Technol. A, vol. 4, pp. 2499-2504, 1986.
  7. R. Schwarz, J. Kolodzey, R.T. Kouzes and S. Wagner, "Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films," Appl. Phys. Lett., vol. 50, pp. 188-190, 1987.
  8. Z E. Smith, V. Chu, K. Shepard, S. Aljishi, D. Slobodin, J. Kolodzey, S. Wagner and T. L. Chu, "Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films," Appl. Phys. Lett., vol. 50, pp. 1521-1523, 1987.
  9. S. Aljishi, V. Chu, Z E. Smith, D.-S. Shen, J.P. Conde, D. Slobodin, J. Kolodzey and S. Wagner, "Steady state and transient transport in a-Si,Ge:H,F alloys," J. Non-Crystalline Solids, vol. 97 & 98, pp. 1023-1026, 1987.
  10. J. Kolodzey, R. Schwarz, S. Aljishi, V. Chu, D.-S. Shen, P.M. Fauchet and S. Wagner, "Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap," Appl. Phys. Lett., vol. 52, pp. 477-479, 1988.
  11. J.P. Leburton, J. Kolodzey and S. Briggs, "Bipolar tunneling field effect transistor: a three terminal negative differential resistance device for high-speed applications," Appl. Phys. Lett., vol. 52, pp. 1608-1610, 1988.
  12. J. Kolodzey, J. Laskar, T.K. Higman, M. A. Emanuel, J.J. Coleman and K. Hess, "Microwave frequency operation of the heterostructure hot electron diode," IEEE Electron Device Lett., vol. 9, pp. 272-274, 1988.
  13. M. A. Emanuel, T. K. Higman, J. M. Higman, J. S. Kolodzey, J. J. Coleman and K. Hess, "Theoretical and experimental investigations of the heterostructure hot electron diode," Solid State Electronics, vol. 31, pp. 589-592, 1988.
  14. J.P. Leburton and J. Kolodzey, "Tunneling injection into modulation doping structures: a basic mechanism for negative differential resistance three terminal high speed devices," IEEE Trans. Electron Devices, vol. 35, pp. 1530-1532, 1988.
  15. A. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. A. Aina and H. Hier, "Dependence of Current-Gain Cutoff Frequency on Gate-Length in Submicron InGaAs/InAlAs MODFETs," Electronics Lett., vol. 25, pp. 440-442, 1989.
  16. A. Ketterson, E. Andideh, I. Adesida, T. L. Brock, J. Baillargeon, J. Laskar,K. Y. Cheng and J. Kolodzey, "Selective reactive ion etching for short gate-length GaAs/AlGaAs/InGaAs pseudomorphic MODFETs," J. Vac. Sci. Technol., vol. B7, pp. 1493--1496, 1989.
  17. J. Kolodzey, J. Laskar, S. Boor, S. Reis, A. Ketterson, I. Adesida, D. Sivco, R. Fischer and A.Y. Cho, "Cryogenic temperature performance of modulation doped field effect transistors," Electronics Lett., vol. 25, pp. 777-779, 1989.
  18. J.N. Baillargeon, K. Y. Cheng, J. Laskar and J. Kolodzey, "A three-terminal delta-doped barrier switching device with S-shaped negative differential resistance," Appl. Phys. Lett., vol. 55, pp. 663-665, 1989.
  19. A. A. Ketterson, J. Laskar, T. L. Brock, I. Adesida, J. Kolodzey, O. A. Aina, and H. Hier, "DC and RF characterization of short gate-length InGaAs/InAlAs MODFETs," IEEE Trans. Electron Devices, vol. 36, pp. 2361--2363, 1989.
  20. J. Laskar, A. A. Ketterson, J.N. Baillargeon, T. Brock, I. Adesida, K. Y. Cheng, and J. Kolodzey, "Gate controlled negative differential resistance in drain current characteristics of GaAs/InGaAs/AlGaAs pseudomorphic MODFETs," IEEE Electron Device Lett., vol. 10, pp. 528--530, 1989.
  21. I. Adesida, A. A. Ketterson, T. L. Brock, J. Laskar, J. Kolodzey, O. Aina and H. Hier, "Fabrication and characterization of short gate-length InAlAs/InGaAs/InP MODFETS," Microelectronics Engineering, vol. 9, pp. 345-348, 1989.
  22. J. Laskar, J. Kolodzey, S. Boor, K. C. Hsieh, S. Kalem, S. Caracci, A. A. Ketterson, T. Brock, I. Adesida, D. Sivco, and A. Y. Cho, "High indium content graded channel InGaAs/InAlAs pseudomorphic MODFETs," J. Electronic Materials, vol. 19, pp. 249--252, 1990.
  23. J. Kolodzey, J. Laskar, S. Boor, S. Agarwala, S. Caracci, A. A.Ketterson, I. Adesida, K. C. Hsieh, D. Sivco, and A. Y. Cho, "DC and RF properties of InAlAs/InGaAs pseudomorphic MODFETs with graded channels," J. Vac. Sci. Technol., vol. 8, pp. 360--363, 1990.
  24. I. Adesida, A. Ketterson, J. Laskar, S. Agarwala, T. Brock, J. Kolodzey, and H. Morkoc, "0.2 m T-Gate InAlAs/InGaAs MODFET with fT of 170 GHz," Microcircuit Engineering, vol. 11, pp. 69 --72, 1990.
  25. J. Laskar, J. Kolodzey, A. Ketterson, S. Caracci, and I. Adesida, "Frequency response of sub--micrometer pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures," Cryogenics, vol. 30, pp. 1134--1139, 1990.
  26. W. H. Guggina, A. A. Ketterson, E. Andideh, J. Hughes, I. Adesida, S. Caracci, and J. Kolodzey, "Characterization of GaAs/AlGaAs selective reactive ion etching in SiCl4/SiF4 plasmas, " J. Vac. Sci. Technol. B, vol. 8, pp. 1956-1959, 1990.
  27. J. Laskar, J. Kolodzey, A. A. Ketterson, I. Adesida, and A.YCho, "Characteristics of doped channel MISFETs at cryogenic temperatures," IEEE Electron Device Lett., vol. 11, pp. 300--302, 1990.
  28. J. Laskar and J. Kolodzey, "Cryogenic vacuum high frequency probe station," J. Vac. Sci. Technol. B, vol. 8, pp. 1161--1165, 1990.
  29. J. Laskar, A.W. Hanson, B.T. Cunningham, J. Kolodzey, G. Stillman, and S.J. Prasad, "Effect of reduced temperature on the fT of AlGaAs/GaAs heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 12, pp. 329--331, 1991.
  30. M. Feng, J. Laskar, W. Miller, J. Kolodzey, G.E. Stillman, and C. L. Lau, "Characterization of ion implanted InGaAs/GaAs 0.25 micron gate metal semiconductor field effect transistors with fT > 100 GHz," Appl. Phys. Lett., vol. 58, pp. 2690--2691, 1991.
  31. J. Laskar, S. Maranowski, S. Caracci, M. Feng, and J. Kolodzey, "Reduced lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs field effect transistors,'' Appl. Phys. Lett., vol. 59, pp. 2412--2414, 1991.
  32. F. Wang, T. Muschik, T. Fischer, M. Bollu, J. Kolodzey, and R. Schwarz, "Asymmetric degradation of electron and hole - products in a-SiC:H multilayers under illumination," J. Non-Crystalline Solids, vols. 137 & 138, pp. 1143--1146, 1991.
  33. R. Schwarz, T. Fischer, P. Hanesch, T. Muschik, J. Kolodzey, H. Cerva, H. L. Meyerheim, and B.M.U. Scherza, "Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers," Applied Surface Science, vol. 50, pp. 456--461, 1991.
  34. J. Kolodzey, P. Hanesch, T. Fischer, R. Schwarz, G. Zorn, and H. Goebel, "Interdiffusion in amorphous Si/SiC multilayers," Materials Science and Engineering B11, pp. 43-46, 1992.
  35. J. Laskar, J.M. Bigelow, J.P. Leburton, and J. Kolodzey, "Experimental and theoretical investigation of the DC and high frequency characteristics of the negative differential resistance in pseudomorphic AlGaAs/InGaAs/GaAs MODFETs," IEEE Trans. on Electron Devices, vol. 39, pp. 257-263, 1992.
  36. S. Maranowski, J. Laskar, M. Feng, and J. Kolodzey, "Cryogenic microwave performance of 0.5 m InGaAs MESFETs," IEEE Electron Device Lett., vol. 13, pp. 64-66, 1992.
  37. J. Laskar, R. N. Nottenburg, J. A. Baquedano, A. F. J. Levi, J. Kolodzey, "Forward transit delay in InGaAs heterojunction bipolar transistors with nonequilibrium electron transport," IEEE Trans. Electron Devices, vol. 40, pp. 1942-1949, 1993.
  38. J. Kolodzey, P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M. M. Waite, S. I. Shah, C. P. Swann, and K. M. Unruh, "Optical and electronic properties of SiGeC alloys grown on Si substrates,'' J. Crystal Growth, v. 157, pp. 386--391, 1995.
  39. J. Kolodzey, P. A. O'Neil, S. Zhang, B. A. Orner, K. Roe, K. M. Unruh, C. P. Swann, M. M. Waite and S. Ismat Shah, "Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy," Appl. Phys. Lett., vol. 67, pp. 1865-1867, 1995.
  40. B. A. Orner, D. Hits, J. Kolodzey, F.J. Guarin, A.R. Powell, and S. S. Iyer, "Optical absorption in alloys of Si, Ge, C, and Sn,'' J. Appl. Phys., v. 79, pp. 8656-8659, 1996.
  41. B. A. Orner, J. Olowolafe, K. Roe, J. Kolodzey, T. Laursen, J. W. Mayer and J. Spear, "Bandgap of Ge-rich SiGeC alloys," Appl. Phys. Lett., vol. 69, pp. 2557-2559, 1996.
  42. F. Chen, B. A. Orner, D. Guerin, A. Khan, P. R. Berger, S. Ismat Shah, and J. Kolodzey, "Current transport characteristics of SiGeC/Si heterojunction diodes, '' IEEE Electron Device Lett., v. 17, pp. 589-591, 1996.
  43. B. Orner, A. Khan, D. Hits, F. Chen, K. Roe, J. Pickett, X. Shao, R. G. Wilson, P. R. Berger and J. Kolodzey, "Optical properties of GeC alloys,'' J. Electronic Materials, vol. 25, pp. 297-300, 1996.
  44. F. Chen, B. A. Orner, J. Kolodzey, M. M. Waite, S. I. Shah and S. S. Iyer, "Measurements of energy band offsets of SiGe/Si and GeC/Ge heterojunctions,'' Appl. Surface Science, vol. 104-105, pp. 615-620, 1996.
  45. K.E. Junge, R. Lange, J.M. Dolan, S. Zollner, M. Dashiell, B. A. Orner, and J. Kolodzey, "Dielectric response of thick low dislocation density Ge epilayers grown on (001) Si,'' Appl. Phys. Lett., v. 69, pp. 4084-4086, 1996.
  46. J. Kolodzey, F. Chen, B. A. Orner, D. Guerin and S. Ismat Shah, "Energy band offsets of SiGeC heterojunctions,'' Thin Solid Films, v. 302, pp. 201-203, 1997.
  47. X. Shao, S. L. Rommel, B. A. Orner, P. R. Berger, J. Kolodzey, and K. M. Unruh, "Low resistance Ohmic contacts to p-GeC on Si,'' IEEE Electron Device Lett., v. 18, pp. 7-9, 1997.
  48. B. A. Orner, and J. Kolodzey, "SiGeC alloy band structures by linear combination of atomic orbitals,'' J. Appl. Phys., v. 81, pp. 6773-6780, 1997.
  49. E.A. Chowdhury, J. Kolodzey, J. Olowolafe, G. Qui, G. Katulka, D. Hits, M. Dashiell, D. van der Weide, C.P. Swann, and K. M. Unruh, "Thermally oxidized AlN thin films for device insulators,'' Appl. Phys. Lett., v. 70, pp. 2732-2734, 1997.
  50. Xiaoping Shao, S. L. Rommel, B. A. Orner, J. Kolodzey, and Paul R. Berger, "A p-GeC/n-Si Heterojunction Diode Grown by Molecular Beam Epitaxy,'' IEEE Electron Device Lett., v. 18, pp. 411-413, 1997.
  51. J. Kolodzey, E.A. Chowdhury, G. Qui, J. Olowolafe, C.P. Swann, K.M. Unruh, J. Suehle, R.G. Wilson, and J.M. Zavada, "The effects of oxidation temperature on the capacitance-voltage characteristics of oxidized AlN films on Si,'' Appl. Phys. Lett., v, 71, pp. 3802-3804, 1997.
  52. M.W. Dashiell, L.V. Kulik, D. Hits, J. Kolodzey, and G. Watson, "Carbon incorporation in SiC alloys grown by molecular beam epitaxy using a single silicon-graphite source,'' Appl. Phys. Lett., v. 72, pp. 833-835, 1998.
  53. Xiaoping Shao, S.L. Rommel, B. A. Orner, H. Feng, M.W. Dashiell, R. T. Troeger, J. Kolodzey, Paul R. Berger, and Thomas Laursen, "1.3m photoresponsivity in Si-based Ge1-yCy photodiodes,'' Appl. Phys. Lett., 72, pp. 1860-1862, 1998.
  54. L.V. Kulik, D. Hits, M.W. Dashiell, and J. Kolodzey, "The effect of composition on the thermal stability of SiGeC/Si heterostructures,'' Appl. Phys. Lett., v. 72, pp. 1972-1974, 1998.
  55. Joachim Piprek, Thomas Troeger, Bernd Schroeter, J. Kolodzey, "Thermal conductivity reduction in GaAs/AlAs distributed Bragg reflectors,'' Photonics Technology Lett.,v. 10, pp. 81-83, 1998.
  56. R. Jonczyk, D. A. Hits, L.V. Kulik, J. Kolodzey, M. Kaba, and M. Barteau, "Size distribution of SiGeC dots grown onSi(311) and Si(100) surfaces,'' J. Vac. Sci. Tech., v. B 16, pp. 1142-1144, 1998.
  57. C. Guedj, M.W. Dashiell, L.V. Kulik, and J. Kolodzey, "Precipitation of-SiC in Si1-yCy alloys,'' J. Appl. Phys., v. 84, no. 7, pp. 4631-4633, 1998.
  58. K. E. Junge, N. R. Voss, R. Lange, J. M. Dolan, S. Zollner, M. Dashiell, D. A. Hits, B. A. Orner, R. Jonczyk, and J. Kolodzey, "Optical properties and band structure of GeC and Ge-rich SiGeC alloys,'' Thin Solid Films, v. 313-314, pp. 172-176, 1998.
  59. Sean L. Rommel, Thomas E. Dillon, M. W. Dashiell, H. Feng, J. Kolodzey, Paul R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, A. C. Seabaugh, G. Klimeck and D. K. Blanks, "Room temperature operation of epitaxially grown Si/ Si0.5Ge0.5 /Si resonant interband tunneling diodes,'' Appl. Phys. Lett., v. 73, 1998, pp. 2191-2193, 1998.
  60. A. Chowdhury, M. Dashiell, G. Qui, J. O. Olowolafe, R. Jonczyk, D. Smith, A. Barnett, J. Kolodzey, K. M. Unruh, C. P. Swann, J. Suehle and Y. Chen, "Structural, optical and electronic properties of oxidized AlN thin films at different temperatures,'' J. Electronic Materials, v. 27, pp. 918-922, 1998.
  61. J. Kolodzey, O. Gauthier-Lafaye, S. Sauvage, J.-L. Perrossier, P. Boucaud, F.H. Julien, J.-M. Lourtioz, F. Chen, B. A. Orner, K. Roe, C. Guedj, R.G. Wilson, and J. Spear, "The effects of composition and doping on the response of GeC/Si photodiodes," IEEE J. Selected Topics in Quantum Electronics, v. 4, pp. 964-969, Nov./Dec. 1998.
  62. M. W. Dashiell, R. T. Troeger, K. J. Roe, A-S. Khan, B. Orner, J. O. Olowolafe, P. R. Berger, R. G. Wilson and J. Kolodzey, "Electrical and optical properties of phosphorus doped Ge1-yCy,'' Thin Solid Films, v. 321, pp. 47-50, 1998.
  63. G. Katulka, J. Kolodzey and J. Olowolafe, "Analysis of high temperature materials for application to electric weapon technology," IEEE Trans. on Magnetics, v. 35, pp. 356-360, 1999.
  64. Xiaoping Shao, Ralf Jonczyk, M. W. Dashiell, D. Hits, B. A. Orner, A-S. Khan, K. Roe, J. Kolodzey, Paul R. Berger, M. Kaba, M. A. Barteau, and K. M. Unruh, "Strain modification in thin Si1-x-yGexCy Alloys on (100) Si for formation of high density and uniformly sized quantum dots," J. Appl. Phys., v. 85, pp. 578-582, 1999.
  65. C. Guedj and J. Kolodzey, "Substitutional Ge in 3C-SiC,'' Appl. Phys. Lett., v. 74, pp. 691-693, 1999.
  66. G. Katulka, C. Guedj, J. Kolodzey, R. G. Wilson, C. Swann, M. W. Tsao, and J. Rabolt, "Electrical and Optical Properties of Ge Implanted 4H-SiC," Appl. Phys. Lett., v. 74, pp. 540-542, 1999.
  67. R. Duschl, O. G. Schmidt, W. Winter, K. Eberl, M. W. Dashiell, J. Kolodzey, N. Y. Jin-Phillipp and F. Phillipp, "Growth and thermal stability of pseudomorphic Ge1-yCy /Ge superlattices on Ge (001),'' Appl. Phys. Lett., v. 74, pp. 1150-1154, 1999.
  68. L. V. Kulik, C. Guedj, M. W. Dashiell, J. Kolodzey, and A. Hairie, "The phonon spectra of substitutional carbon in SiGe alloys,'' Physical Review B, v. 59, pp. 15753-15759, 1999.
  69. K. Roe, M. W. Dashiell, J. Kolodzey, C. Guedj, P. Boucaud and J.-M. Lourtioz,"The MBE growth of Ge1-yCy alloys on Si (100) with high carbon contents, " J. Vac. Sci. Technol. B, vol. 17, pp. 1301-1303, May/June, 1999.
  70. C. Guedj, J. Kolodzey and A. Hairie, "Structure and lattice dynamics of GeC alloys using anharmonic Keating modeling,'' Physical Review B, v. 60, (22), pp. 15150-15150, 1999.
  71. J. Kolodzey, E. A. Chowdhury, T. N. Adam, G. Qui, I. Rau, J. O. Olowolafe, J. S. Suehle, and Y. Chen, "Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon,'' IEEE Trans. Electron Devices, v. 47, pp. 121-128, 2000.
  72. "Heterostructures of pseudomorphic GeC and GeSiC grown on Ge (100) substrates," J. Vac. Sci. Technol. B, vol. 18, pp. 1728-1731, May/Jun 2000.
  73. M. W. Dashiell, R. T. Troeger, S. L. Rommel, T. N. Adam, P. R. Berger, J. Kolodzey, A. C. Seabaugh and R. Lake, "Current voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of post growth annealing,'' IEEE Trans. Electron Devices, vol. 47, pp. 1707-1714, 2000.
  74. L. Gonzalez, C. D. Muzzy, H. K. Lee, M. D. Levy, M. W. Dashiell, and J. Kolodzey, "Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects," J. Vac. Sci. Technol. B, v. 18, pp. 2826-2834, Nov/Dev 2000.
  75. K. J. Roe, G. Katulka, J. Kolodzey, S. E. Saddow, and D. Jacobson, "Silicon Carbide and Silicon Carbide:Germanium Heterostructure Bipolar Transistors,'' Appl. Phys. Lett., v. 78, pp. 2073-2075, 2001.
  76. T. Adam, J. Kolodzey, C. P. Swann, M. W. Tsao and J. F. Rabolt, "The electrical properties of MIS capacitors with AlN gate dielectrics," Appl. Surface Science, v. 175-176, pp.
  77. G. Katulka, K. Roe, J. Kolodzey, G. Eldridge, R. C. Clarke, C. P. Swann and R. G. Wilson, "The electrical characteristics of silicon carbide alloyed with germanium," Appl. Surface Science, v. 175-176, pp.
  78. K. J. Roe, J. Kolodzey, C. P. Swann, M. W. Tsao, J. F. Rabolt, J. Chen and G. R. Brandes, "The electrical and optical properties of thin film diamond implanted with silicon," Appl. Surface Science, v. 175-176, pp. 468-473, 2001.
  79. G. Katulka, K. J. Roe, and J. Kolodzey, C. P. Swann, R. C. Clarke, G. Eldridge, G. DeSalvo, and R. Messham, "A Technique To Reduce The Contact Resistance To 4H-Silicon Carbide Using Germanium Implantation,'' J. Electronic Materials, v. 31, pp. 346-350, 2002.
  80. M.W. Dashiell, J. Kolodzey, P. Crozat, F. Aniel and J.-M. Lourtioz. "Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy," IEEE Electron Device Lett., v. 23, pp. 357-359, 2002.
  81. A. Hattab, M.O. Aboelfotoh, G. Tremblay, F. Meyer, J. Kolodzey, H.J. Osten, and C. Dubois, "Diffusion and electrical activity of copper in Si1-x-yGexCy alloys," Microelectronic Engineering, v. 60: (1-2) pp. 283-288, 2002.
  82. M. S. Kagan, I. V. Altukhov, E. G. Chirkova, V. P. Sinis, R. T. Troeger, S. K. Ray, and J. Kolodzey, "THz lasing of SiGe/Si quantum-well structures due to shallow acceptors," Phys. Stat. Sol., v. (b) 235, no. 1, pp. 135-138, 2003.
  83. M. S. Kagan, I. V. Altukhov, E. G. Chirkova, V. P. Sinis, R. T. Troeger, S. K. Ray, and J. Kolodzey, "THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures," Phys. Stat. Sol., v. (b) 235, no. 2, pp. 293-296, 2003.
  84. Shouyuan Shi, Dennis W. Prather, Liuqing Yang, and James Kolodzey, "Influence of support structure on microdisk resonator performance," Optical Engineering, v. 42, Number 2, February 2003.
  85. T. N. Adam, R. T. Troeger, S. K. Ray, P.-C. Lv, and J. Kolodzey, "Terahertz electroluminescence from boron impurities in bulk silicon," Appl. Phys. Lett., vol. 83, pp. 1713-1715, 2003.
  86. Kagan MS, Altukhov IV, Sinis VP, Chirkova EG, Yassievich IN, Kolodzey J, "Terahertz stimulated emission from strained p-Ge and SiGe/Si structures," Journal Of Communications Technology And Electronics, v. 48 (9), pp. 1047-1054 Sep. 2003.
  87. Sriram Venkataraman, Janusz Murakowski, Thomas N. Adam, James Kolodzey, Dennis W. Prather, "Fabrication of high-fill-factor photonic-crystal devices on silicon-on-insulator substrates (JM3 073007)," J. Microlithography, Microfabrication, and Microsystems, v. 2, number 4, pp. 248-254, October 2003.
  88. I.V. Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray, J. Kolodzey, A.A. Prokofiev, M.A. Odnoblyudov, I.N. Yassievich, "Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures," Physica B-Condensed Matter, v. 340-342, pp. 831-834, Dec 31 2003.
  89. S. K. Ray, T. N. Adam, R. T. Troeger, J. Kolodzey, G. Looney, and A. Rosen, "Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1-xGex films," Journal of Appl. Phys., vol. 95, pp. 5301 - 5304, May 2004.
  90. M.W. Dashiell, E. Ansorge, Xin Zhang, Guanchi Xuan, J. Kolodzey, G. DeSalvo, J. Gigante, C. Clarke, and C. Swann, "Pseudomorphic SiC:Ge heterostructures formed by low energy ion implantation," submitted to Appl. Phys. Lett., 2003.
  91. Ralph T. Troeger, Ulrike Lehmann, Thomas N. Adam, Samit K. Ray, Pengcheng Lv, James Kolodzey, and Richard A. Soref, "Tunable SiGe/Si terahertz sources based on hole transitions in stepped quantum wells," submitted to IEEE J. Quantum Elec., August, 2003.
  92. P.-C. Lv, R.T. Troeger, T.N. Adam, S. Kim, J. Kolodzey, I.N. Yassievich, M.A. Odnoblyudov, and M. Kagan, "Electroluminescence at 7 Terahertz(THz) from phosphorus donors in silicon," Appl. Phys. Lett., vol. 84, July 2004, in press.
  93. P.-C. Lv, R.T. Troeger, T.N. Adam, S. Kim, J. Kolodzey, I.N. Yassievich, M.A. Odnoblyudov, and M. Kagan, "Terahertz emission from electrically pumped gallium doped silicon devices," Appl. Phys. Lett., 2004, in press.

II. Conference and Trade Papers

  1. J. Kolodzey, "A noise analysis method for optical receivers," Proc. IEEE International Symposium on Circuits and Systems, (IEEE, New York, 1977) pp. 183-186.
  2. F. E. Noel and J. Kolodzey, "Nomograph shows bandwidth for specified pulse shape," Electronics, p. 102, April 1976.
  3. R. Schwarz, J. Kolodzey, S. Aljishi, R. T. Kouzes and S. Wagner, "Radiation damage by 12 MeV protons and annealing of hydrogenated amorphous silicon," 18th IEEE Photovoltaic Specialists Conf. Record, (IEEE, New York, 1985) pp. 903-908.
  4. D. Slobodin, J. Kolodzey, S. Aljishi, Y. Okada, V. Chu, D.-S. Shen, R. Schwarz and S. Wagner, "a-Si,Ge:H,F alloys prepared by DC and RF glow discharge deposition," 18th IEEE Photovoltaic Specialists Conf. Record, (IEEE, New York, 1985) pp. 1505-1512.
  5. J. Kolodzey, S. Aljishi, R. Schwarz, and S. Wagner, "Glow discharge deposition of a-Si1-x Gex:H,F alloys,'' Electrochemical Soc. Spring Meeting Extended Abstracts, Toronto, May 1985, abstract 176, vol. 85--1, p. 248.
  6. S. Wagner, D. Slobodin, J. Kolodzey, S. Aljishi and R. Schwarz, "Alloys of amorphous hydrogenated silicon," Acta-Scripta Met. Proc. Ser., vol. 3, pp. 334-350, 1986.
  7. J. Kolodzey, S. Aljishi, Z E. Smith, V. Chu, R. Schwarz and S. Wagner, "Measurements of light-induced defect creation in a-Si,Ge:H,F alloys," in Materials Issues in Amorphous Semiconductor Technology,D. Adler, Y. Hamakawa and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol. 70, 1986, pp. 237-242.
  8. S. Aljishi, Z E. Smith, D. Slobodin, J. Kolodzey, V. Chu, R. Schwarz and S. Wagner, "Electronic transport and density of states distribution in a-Si,Ge:H,F alloys," in Materials Issues in Amorphous Semiconductor Technology, D. Adler, Y. Hamakawa and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol. 70, 1986, pp. 269-274.
  9. R. Schwarz, Y. Okada, S.-F. Chou, J. Kolodzey, D. Slobodin and S. Wagner, "Fluorine incorporation and annealing properties in a-Si,Ge:H,F alloys studied by nuclear elastic scattering and IR absorption," in Materials Issues in Amorphous Semiconductor Technology, D. Adler, Y. Hamakawa and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol. 70, 1986, pp. 283-288.
  10. D.-S. Shen, J. Kolodzey, D. Slobodin, J.P. Conde, C. Lane, I. H. Campbell, P.M. Fauchet and S. Wagner, "Microcrystallinity in a-Si,Ge:H,F alloys," in Materials Issues in Amorphous Semiconductor Technology, D. Adler, Y. Hamakawa and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol. 70, 1986, pp. 301-306.
  11. J. Kolodzey, S. Aljishi, R. Schwarz, D.-S. Shen, S. Quinlan, S. A. Lyon and S. Wagner, "Electron and hole transport perpendicular to the planes of a-Si:H/a-Si,Ge:H compositional superlattices," in Materials Issues in Amorphous Semiconductor Technology, D. Adler, Y. Hamakawa and A. Madan, editors, Mat. Res. Soc. Symp. Proc., vol. 70, 1986, pp. 429-434.
  12. J. Kolodzey, Y. Okada, D.-S. Shen, S.-F. Chou, R. Schwarz and S. Wagner, "X-ray diffraction and infrared absorption of annealed a-Si:H,F/a-Si,Ge:H,F superlattices," in Semiconductor--Based Hetero-Structures:Interfacial Structure & Stability, M. L. Green et al., eds. Metallurgical Society Meeting Proc., Warrendale, PA, 1986, pp. 223-229.
  13. P.M. Fauchet, D. Hulin, A. Migus, A. Antonetti, J. Kolodzey and S. Wagner, "Femtosecond spectroscopy in a-Si:H," Proc. 18th International Conf. on the Physics of Semiconductors, Stockholm, 1986, World Scientific, Singapore, 1987, pp. 1029-1032.
  14. S. Aljishi, Z E. Smith, V. Chu, J. Kolodzey, D. Slobodin, J. Conde, D.-S. Shen and S. Wagner, "Light-induced defect generation and thermal healing processes in amorphous silicon-germanium alloys," Proc. Int. Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, Palo Alto, Jan. 1987, B. L. Stafford and E. Sabisky, eds. (AIP Conf. Proc. 157, New York, 1987) pp. 25-32.
  15. R. Schwarz, J. Kolodzey, D. Slobodin, Y. Okada, V. Chu, S. Aljishi, Z E. Smith and S. Wagner, "Comparison of diffusion length in a-Si,Ge:H,F after light or proton irradiation," Proc. International Conf. on Stability of Amorphous SiliconAlloy Materials and Devices,Palo Alto, Jan. 1987, B. L. Stafford and E. Sabisky, eds. (AIP Conf. Proc. 157, New York, 1987) pp. 87-94.
  16. R. Schwarz, K. Dietrich, S. Goedecker, J. Kolodzey, D. Slobodin and S. Wagner, "Temperature dependence of optical properties and minority carrier diffusion length in a-Si Ge:H,F, in Amorphous Silicon Semiconductors -Pure and Hydrogenated, Y. Hamakawa, A. Madan and M. Thompson, eds., Mat. Res. Soc. Symp. Proc., vol. 95, 1987, pp. 353-359.
  17. S. Aljishi, D.-S. Shen, V. Chu, Z E. Smith, J.P. Conde, J. Kolodzey, D. Slobodin and S. Wagner, "Recombination and electronic transport in low gap a-Si,Ge:H,F alloys," in Amorphous Silicon Semiconductors - Pure and Hydrogenated, Y. Hamakawa, A. Madan and M. Thompson, eds., Mat. Res. Soc. Symp. Proc., vol. 95, 1987, pp. 323-328.
  18. V. Chu, S. Aljishi, J.P. Conde, Z E. Smith, D.-S. Shen, D. Slobodin, J. Kolodzey, C. R. Wronski and S. Wagner, "Schottky barrier devices on a-Si, Ge:H,F alloys," 19th IEEE Photovoltaic Specialists Conf. Record, (IEEE, New York, 1987) pp. 610-614.
  19. D.-S. Shen, J.P. Conde, S. Aljishi, Z E. Smith, V. Chu, J. Kolodzey and S. Wagner, "The electron collection efficiency of a-Si,Ge:H,F at 300 K to 400 K," 19th IEEE Photovoltaic Specialists Conf. Record, (IEEE, New York, 1987) pp. 884-888.
  20. J.P. Conde, V. Chu, S. Aljishi, D.-S. Shen, Z E. Smith, J. Kolodzey and S. Wagner, "a-Si:H,F/a-Si,Ge:H,F superlattices as low bandgap absorbers for solar cells," 19th IEEE Photovoltaic Specialists Conf. Record, (IEEE, New York, 1987) pp. 1107-1110.
  21. J. Kolodzey, S. Boor, P. Saunier, J. W. Lee and H.-Q. Tserng, "Microwave performance of InAlAs/InGaAs high electron mobility transistors at 77 K," Proc. IEEE/Cornell University Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits, August 1987, (IEEE, New York, 1987) pp. 53-59.
  22. T.K. Higman, J.M. Higman, M. A. Emanuel, K. Hess, J.J. Coleman, and J. Kolodzey, "The switching mechanism in the heterostructure hot electron diode," 45th Annual Device Research Conference Program, IEEE Trans. Electron Devices, vol. ED-34, p. 2381, 1987.
  23. J. Kolodzey, I. Adesida, J. Laskar, S. Boor, S. Reis, A. Ketterson, A. Y. Cho, R. Fischer, and D. Sivco, "Frequency response of AlInAs/GaInAs/InP modulation doped field effect transistors at cryogenic temperature," 46th Annual Device Research Conference Program, Boulder, June 1988, IEEE Trans. Electron Devices, vol. 35, p. 2442, 1988.
  24. T. Fischer, P. Hanesch, T. Muschik, J. Kolodzey, R. Schwarz, G. Neff, H. Schneider, and M. Stanger, "Thermal stability of a-Si:H/a-SiC:H superlattices studied by hydrogen effusion, X-ray diffraction, IR spectroscopy and photoluminescence," Proc. 10th European Photovoltaic Conf., Lisbon, 1991.
  25. G. Zorn, H. Goebel, J. Kolodzey, T. Fischer, P. Hanesch, and R. Schwarz, "Hydrogen loss and diffusion in amorphous Si/SiC multilayers," Materials Science Forum, vols. 79--82, (Copyright TransTech Publications, Zurich, 1991) pp. 887--892.
  26. J. Laskar, R.N. Nottenburg, A.F.J. Levi, S. Schmitt-Rink, J. Kolodzey, D. A. Humphrey, R. A. Hamm and M. B. Panish, "Non-equilibrium transport in ultra-fast InGaAs/InP heterostructure bipolar transistors," Proc. Int. Conf. on InP and Related Compounds, Wales, April, 1991.
  27. J. Kolodzey, J. Krajewski, R. Shekhar, M. Barteau, R. Schwarz, T. Muschik, F. Wang, R. Plaettner, and E. Guenzel, "Optoelectronic properties of amorphous SiGeC:H alloys,''in Amorphous Silicon Technology -- 1992, A. Madan, Y, Hamakawa, M. Thompson, E. A. Schiff, and P. G. LeComber, eds., Mat. Res. Soc. Symp. Proc., vol. 258, pp. 637--642, 1992.
  28. R. Schwarz, T. Fischer, P. Hanesch, J. Lanz, J. Kolodzey, G. Zorn, H. Goebel, "Anomalous carbon interdiffusion in a-Si:H/a-SiC:H multilayers,'' Amorphous Silicon Technology -- 1992,A. Madan, Y, Hamakawa, M. Thompson, E. A. Schiff, and P. G. LeComber, eds., Mat. Res. Soc. Symp. Proc., vol. 258, 1992.
  29. J. Kolodzey, S. Zhang, P. O'Neil, E. Hall, R. McAnnally, and C. P. Swann, "Growth of GeC alloys by molecular beam epitaxy,'' Proc. 5th Int. Conf. on Silicon Carbide and Related Materials, Washington, DC, 1993, Inst. Phys. Conf. Ser. No. 137, Chapter 3, pp. 357--360.
  30. J. Kolodzey, P.A. O'Neil, S. Zhang, B. Orner, K. M. Unruh, and C. P. Swann, "Growth and properties of SiGeC alloys,'' 1994 North American Conference on Molecular Beam Epitaxy, Urbana, IL, October, 1994.
  31. M. G. Mauk, Z. A. Shellenbarger, B. W. Feyock, K. J. Roe, J. Kolodzey, and J. J. Kramer, "Selective and lateral epitaxy of -SiC on silicon for high-temperature electronics applications,'' Trans. 3rd Int. High Temperature Electronics Conf. (HiTEC), (Albuquerque, NM, June 1996), vol. 2, pp. P173-P178.
  32. G. Qui, J. Olufemi Olowolafe, J. Kolodzey, B. A. Orner, "Interaction of metals with SiGeC and GeC alloys: the role of C on thermal and electrical stability,'' in Material Research Society 1996 Fall Meeting, Symposium, , editors, Mat. Res. Soc. Symp. Proc., vol. , 1996, pp. .
  33. X. Shao, R. Jonczyk, M. Dashiell, D. Hits, B. A. Orner, A-S. Khan, L. Kulik, K. Roe, D. van der Weide, J. Kolodzey, P. R. Berger, M. Kaba, M. Barteau, and K. M. Unruh, "Ordering of SiGeC islands grown on (100) and (311) Si substrates," in Materials Research Society 1997 Spring Meeting, Symposium ,, editors, Mat. Res. Soc. Symp. Proc., vol., 1997, pp..
  34. F. Chen, R. T. Troeger, K. Roe, M. D. Dashiell, R. Jonczyk, D.S. Holmes, R. G. Wilson and J. Kolodzey, "Electrical properties of SiGeC and GeC alloys,'' J. Electronic Materials, v. 26, pp. 1371-1375, 1997.
  35. A. Orner, F. Chen, D. Hits, M. W. Dashiell, and J. Kolodzey, "Optical constants of B and P doped GeC alloys on Si substrates,'' in SPIE Optoelectronics: '97: Silicon-Based Monolithic and Hybrid Optoelectronic Devices, Proc. SPIE Proc. vol. 3007, pp. 152-161, 1997.
  36. X. Shao, S. L. Rommel, B. A. Orner, H. Feng, M. Dashiell, J. Kolodzey, and P. R. Berger, "GeC/Si Heterojunction Photodiodes,'' in Silicon-Based Monolithic and Hybrid Optoelectronic Devices, SPIE Proc. vol. 3007, pp. 162-169, 1997.
  37. M. W. Dashiell, R. T. Troeger, L. V. Kulik, A-S. Khan, F. Chen, K. Roe, B. A. Orner, P. R. Berger, J. Kolodzey, and R. G. Wilson, "Electrical and optical properties of phosphorus doped GeC,'' Seventh International Symposium on Silicon Molecular Beam Epitaxy in Banff, Canada, (July 13-17, 1997), Thin Solid Films, v. 321, pp. 47-50, 1998.
  38. Kelly E. Junge, Rudiger Lange, Jennifer M. Dolan, Stefan Zollner, Josef Humlicek, M. W. Dashiell; D. A. Hits, B. A. Orner, and James Kolodzey, "Ellipsometry studies, optical properties, and band structure of Ge1-yCy, Ge-rich Si1-x-yGexCy, and boron-doped Si1-xGex alloys," in MRS 1998 Spring Meeting, Epitaxy and Applications of Si-Based Heterostructures, E.A. Fitzgerald, P.M. Mooney, D.C. Houghton, editors, Mat. Res. Soc. Symp. Proc., vol. 533, p 125-129, 1998.
  39. L. V. Kulik, C. Guedj, M. W. Dashiell, J. Kolodzey, and A. Hairie, "The vibrational properties of substitutional carbon in SiGe alloys,'' Proc. 24 th International Conf. on the Physics of Semiconductors, Israel, 1998, World Scientific, Singapore, pp. xxx, 1998.
  40. L. Gonzalez, C. D. Muzzy, H.K. Lee, M. D. Levy, M. W. Dashiell, and J. Kolodzey, "The mechanical properties of common interlevel dielectric films and their influences on aluminum interconnect extrusions," in MRS Fall Meeting 1999, Thin Film - Stresses & Mechanical Properties VIII, paper V9.4, Mat. Res. Soc. Symp. Proc. v. 594, p. 421, 2000.
  41. K. J. Roe, J. Kolodzey, C. P. Swann, M. W. Tsao, J. F. Rabolt, J. Chen, G. R. Brandes, and D. Jacobsen, "The electrical and optical properties of thin film diamond implanted with silicon," Proceedings of the ICSFS-10 Conf., Princeton, July 2000.
  42. T. Adam, J. Kolodzey, and C. P. Swann, "The electrical properties of MIS capacitors with AlN gate dielectrics," Proceedings of the ICSFS-10 Conf., Princeton, July 2000.
  43. G. Katulka, J. Kolodzey, K. J. Roe, M. W. Dashiell, T. Adam, R. G. Wilson, Mei Wei Tsao, J. F. Rabolt, and C. P. Swann, "The electrical characteristics of silicon carbide alloyed with germanium," Proceedings of the ICSFS-10 Conf., Princeton, July 2000.
  44. J. Kolodzey, K. J. Roe, G. Katulka, R. G. Wilson, C. P. Swann, R. C. Clarke, G. C. DeSalvo"Heterostructures Based on Silicon Carbide Implanted with Germanium," Tech. Digest of the 27 th Int. Symp. on Compound Semiconductors, Oct., 2000, Monterey, paper WC-5, p. 131.
  45. J. Kolodzey, T. Adam, D. Prather, S. Shi, G. Looney and A. Rosen, "The Fabrication of Silicon-Germanium TeraHertz Microdisk Resonators," Middle Infrared Coherent Sources International Workshop - MICS-2001, St. Petersburg, Russia, 25-29 June 2001
  46. F. Chen and J. Kolodzey, "Current transport mechanisms of Ge1-yCy /Si heterojunction diodes," IBM Microelectronics, USA; University of Delaware, USA, The Sixth International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2001) , Shanghai, China, October 22-25, 2001.
  47. I. Yassievich, M. Kagan, R. T. Troeger, S. K. Ray, and J. Kolodzey, "Stimulated THz emission of SiGe/Si quantum-well structures doped with boron, " Proceedings of the E-MRS Spring Meeting, June 2002, Strasbourg.
  48. M. S. Kagan, I. V. Altukhov, E. G. Chirkova, K. A. Korolev, V. P. Sinis, R. T. Troeger, S. K. Ray, and J. Kolodzey, "Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures," 10th Int. Symposium, Nanostructures: Physics and Technology, St. Petersburg, Russia, June 2002.
  49. T. N. Adam, R. T. Troeger, S. K. Ray, U. Lehmann and J. Kolodzey, "Terahertz Emitting Devices Based on Intersubband Transitions in SiGe Quantum Wells," Proc. 10th Int. Symposium on Nanostructures: Physics and Technology, St. Petersburg, Russia, June 2002.
  50. I.V. Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray, J. Kolodzey, A.A. Prokofiev, M.A. Odnoblyudov, and I.N. Yassievich, "Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures," Proc. of the Int. Conf. on the Physics of Semiconductors, ICPS - 02, Glasgow, 2002.
  51. T. Adam, R. T. Troeger, S. Ray, U. Lehmann, S. Shi, D. Prather, and J. Kolodzey, "The Design and Fabrication of Microdisk Resonators for Terahertz Frequency Operation," Proc. IEEE Lester Eastman Conference on High Performance Devices, paper IV-8, pp. 402-408, August 2002.
  52. M. W. Dashiell, R. Leeson, K. Roe, Anand T. Kalambur, J. F. Rabolt, and J. Kolodzey, "The Electrical Effects of DNA as the Gate Electrode of MOS transistors," IEEE Lester Eastman Conference on High Performance Devices, paper IV-8, pp. 259-264, August 2002.
  53. K. J. Roe, M. W. Dashiell, G. Xuan, E. Ansorge, G. Katulka, N. Sustersic, X. Zhang and J. Kolodzey, G.C. DeSalvo, J. R. Gigante and R.C. Clarke, "Ge Incorporation in SiC and the Effects on Device Performance," IEEE Lester Eastman Conference on High Performance Devices,
  54. I.V. Altukhov, E.G. Chirkova, V.P. Sinis, M.S. Kagan, R.T. Troeger, S.K. Ray, J. Kolodzey, A.A. Prokofiev, M.A. Odnoblyudov, and I.N. Yassievich, "Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures," paper X.6 at the WOCSDICE 2002, 26th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, May 21 - 25, 2002, Chernogolovka, Russia.
  55. M.W. Dashiell, Xin Zhang, G. Xuan, and J. Kolodzey, "Pseudomorphically Strained Layers in 4H SiC formed by Germanium Implantation," in MRS Fall Meeting 2002, Symposium K Silicon Carbide--Materials, Processing, and Devices, S.E. Saddow, D.J. Larkin, N.S. Saks, A. Schoener, and M. Skowronski, editors, Mat. Res. Soc. Symp. Proc. v. 742, 2002, pp. K6.7.1 - K6.7.6.
  56. R.T. Troeger, T.N. Adam, S.K. Ray, P.C. Lv, U. Lehmann and J. Kolodzey, "Terahertz-Emitting Silicon-Germanium Superlattices Based On Hole-Level Intersubband Transitions," in MRS Fall Meeting 2002 Symposium M, Progress in Semiconductor Materials II--Electronic and Optoelectronic Applications, B.D. Weaver, M.O. Manasreh, C.C. Jagadish, and S. Zollner, editors, Mat. Res. Soc. Symp. Proc. v. 744, 2002, pp. M2.4.1- M2.4.6.
  57. S.K. Ray, T.N. Adam, C.P. Swann and J. Kolodzey, and G.S. Kar, "Low Thermal Budget NiSi Films on SiGe Alloys," in MRS Fall Meeting 2002, Symposium-N, Novel Materials and Processes for Advanced CMOS, M.I. Gardner, J-P. Maria, S. Stemmer, and S. De Gendt, editors, Mat. Res. Soc. Symp. Proc. v. 745, 2002, pp. N6.6.1 - N6.6.6.
  58. J. Kolodzey, T. N. Adam, R. T. Troeger, P.-C. Lv, S. K. Ray, G. Looney, A. Rosen, M. S. Kagan, and Irina N. Yassievich, "The Design and Operation of TeraHertz Sources Based on Silicon Germanium Alloys," 4th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 9 - 11th April, 2003, Grainau, Germany, Silicon RF 2003 Digest. (invited talk)
  59. J. Kolodzey, "Sources and detectors of terahertz signals for medical applications," invited talk at the Workshop on Optical/RF/Microwave Technologies for Medical Applications, as part of the IEEE International Microwave Symposium, Philadelphia, Pennsylvania, June 8-13, 2003. (invited talk)
  60. J. Kolodzey, T. N. Adam, R. T. Troeger, P.-C. Lv, S. K. Ray, I. Yassievich, and M. Kagan, "Terahertz sources and detectors based on SiGe nanostructures," 11th International Symposium on Nanostructures: Physics and Technology, St Petersburg, Russia, 23-28, June 2003, special issue of International Journal of Nanoscience, World Scientific Publishing Co., in press.
  61. P.-C. Lv, S. K. Ray, R. T. Troeger, T. N. Adam, X. Zhang, C. Ni, and J. Kolodzey, "Characterization of MBE -grown silicon germanium/silicon multiple quantum wells for terahertz detector applications," presented at Electronic Materials Conference, Salt Lake City, 2003.
  62. J. Kolodzey, T. N. Adam, R. T. Troeger, P.-C. Lv, S. K. Ray, M. S. Kagan, I. N. Yassievich, and Maxim Odnoblyudov, "The characteristics of terahertz sources and detectors based on SiGe nanostructures," Proc. of IWPSD-2003, Twelfth International Workshop on The Physics of Semiconductor Devices 16-20 Dec., 2003, Chennai, India. (invited talk)
  63. J. Kolodzey, T. N. Adam, R. T. Troeger, P.-C. Lv, S. K. Ray, "The characteristics of terahertz lasers," Proc. of NLS-2003, National Laser Symposium 2003, 22-24 Dec., 2003, Kharagpur, India. (invited talk)
  64. Ralph T. Troeger, Thomas N. Adam, Samit K. Ray, Pengcheng Lv, Sangcheol Kim, Guangchi Xuan, Suddhasatwa Ghosh, and James Kolodzey, "Terahertz-emitting devices based on boron-doped silicon," in 2004 International Microwave Symposium, Fort Worth, Texas, June 6-11, 2004, IMS2004 Technical Digest.
  65. J. Kolodzey, Ralph T. Troeger, Pengcheng Lv, and Sangcheol Kim, "Terahertz emitting devices based on dopant transitions in silicon," IEEE LEOS 2004 First IEEE International Conference on Group IV Photonics, Hong Kong, 29 Sept. 2004. (invited talk)
  66. J. Kolodzey, Ralph T. Troeger, Pengcheng Lv, Sangcheol Kim, "Characteristics of terahertz devices based upon impurity-level transitions," 12th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, Lithuania, 22 Aug. 2004. (invited talk)
  67. James Kolodzey, Pengcheng Lv, Ralph Thomas Troeger, and Sangcheol Kim, "Terahertz emitting devices based on impurity transitions in doped silicon," SPIE International Symposium on OpticsEast, Nanosensing: Materials and Devices (OE103), Philadelphia, 25-28 October 2004. (invited talk)
  68. R. T. Troeger, P.-C. Lv, T. N. Adam, Samit K. Ray, S. Kim, and J. Kolodzey, "Investigation of Terahertz-emission from silicon devices doped with boron," submitted to the 2004 Lester Eastman Conference, Rensselaer Polytechnic Institute, August 4-6, 2004.
  69. P.-C. Lv, R.T. Troeger, S. Kim, X. Zhang, G. Xuan, S. Ghosh, J. Kolodzey, I.N. Yassievich, M.A. Odnoblyudov, and M.S. Kagan, "Terahertz electroluminescence from impurity doped silicon," 6th International Conference on Mid-Infrared Optoelectronic Materials and Devices, St Petersburg, June 28 -- July 02, 2004.

III. Book Chapters

  1. J. Kolodzey, "CRAY-1 computer technology," in Tutorial: VLSI Support Technologies, (Computer-Aided Design, Testing, and Packaging), Rex Rice, ed., (IEEE Computer Soc. Press, ISBN 0-8186-0386-0), 1982, pp. 412-417.
  2. P.M. Fauchet, D. Hulin, G. Hamoniaux, A. Orszag, J. Kolodzey and S. Wagner, "Femtosecond spectroscopy of hot carriers in germanium," in Ultra Fast Phenomena V, G. R. Fleming and A. E. Siegman, editors, Springer-Verlag, 1986, pp. 248-250.
  3. J. Kolodzey, "Molecular beam epitaxy of InAlGaAs,'' Handbook of Thin Film Process Technology, S. Ismat Shah, ed., IOP Publishing, 1995.
  4. J. Kolodzey, "Molecular beam epitaxy of SiGe Alloys,'' Handbook of Thin Film Process Technology, S. Ismat Shah, ed., IOP Publishing, 1995.
  5. J. Kolodzey, L. V. Kulik and M. W. Dashiell, "The effects of carbon on the structural and optical properties of SiGeC alloys," in SiGeC Alloys and Their Applications, S. Zollner and Sokrates Pantelides, editors, Gordon & Breach Science Publishers SA, 2002.
  6. J. Kolodzey, "Silicon germanium alloy devices," in Hetero-Structures for High-Performance Devices, Colin Wood and Maurice H. Francombe, Academic Press, 2001.
  7. J. Kolodzey and T. N. Adam, "The design and fabrication of integrated THz resonators," in Sensing Science and Electronic Technology at THz Frequency, ed. D. Woolard, 2002.