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ELEG646Electronic Device PrinciplesSpring 2009
James Kolodzey
Course Syllabus
Course Schedule: Tu Th; 9:30 to 10:45 am, 114 Gore Hall
First Meeting: Monday, February 7
Homeworks
HW1
HW2
HW3
HW4
HW5
HW6
HW7
HW8
HW9
HW10
HW11
HW12
Quizzes
Quiz 1
Quiz 2
Assignments
Course Project - due May 9th
Useful Resources and Links
Carrier Diffusion Notes
Good site for description of quasi Fermi levels
Good site for Hall Effect
Another good site for Hall Effect
Plots of carrier lifetimes, depletion lengths, and Debye lengths
Plots of diode currents showing kT dependence
Schottky diode bands and breakdown fields
William Schockley and the transistor
Good site for description of Shockley-Read-Hall recombination
Good site for description of bipolar transistors
BJT terminal currents by diffusion
BJT terminal currents data
BJT symbols and circuits
SUPREM Process simulator site
MOS surface charge
MOS surface potential
MOS and JFET interactive demonstration site
Haynes-Shockley Experiment Video
Course Evaluation Site
James Kolodzey
Electrical and Computer Engineering
140 Evans Hall
Newark, DE 19716-3130
USA
Phone: 302-831-1164 • Fax: 302-831-4316
E-mail: kolodzey@ee.udel.edu
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