Journal Papers

  1. Qi Cheng, Zilun Wang, Kazy Shariar, Md Sufian, Sourabh Khandelwal, Y. Zeng ,“Self-aligned gate-last process for quantum-well InAs transistor on insulator,” Accepted, Journal of Microelectronic Engineering, 2018.
  2. Ching-Yi Hsu, Yuping Zeng, Chen-Yen Chang, Chenming Hu, and Edward Yi Chang, “Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs,” IEEE Transaction on Electron Devices, Vol. 63, No. 11, pp.4267-4272, 2016.
  3. W. Gao, H. Y. Y. Nyein, Z. Shahpar, H. M. Fahad, K. Chen, S. Emaminejad, Y. Gao, L.-C. Tai, H. Ota, E. Wu, J. Bullock, Y. Zeng, D.-H. Lien, A. Javey, "Wearable Microsensor Array for Multiplexed Heavy Metal Monitoring of Body Fluids", ACS Sensors, 1, 866–874, 2016
  4. Yuping Zeng+, Chingyi Hsu+, Edward Yi Chang, Chenming Hu, “Peak to Valley Current Ratio Engineering of InAs/AlSb/GaSb tunneling diode,” Journal of Engineering, 2017.
  5. Angada B. Sachid, Mahmut Tosun, Sujay B. Desai, Ching-yi Hsu, Der-Hsien Lien, Surabhi R. Madhvapathy, Yu-Ze Chen, Mark Hettick, Jeong Seuk Kang, Yuping Zeng, Jr-Hau He, Edward Yi Chang, Yu-Lun Chueh, Ali Javey, Chenming Hu, “Monolithic 3D CMOS using Layered Semiconductors,” Advanced Materials, 28, 2547–2554, 2016
  6. Kevin Chen, Rehan Kapadia, Audrey Harker, Sujay Desai, Jeong Seuk Kang, Steven Chuang, Mahmut Tosun, Carolin Sutter Fella, Michael Tsang, Yuping Zeng, Daisuke Kiriya, Jubin Hazra, Surabhi Rao Madhvapathy, Mark Hettick, Yu-Ze Chen, James Mastandrea, Matin Amani, Stefano Cabrini, Yu-Lun Chueh, Joel Ager, Daryl Chrzan, Ali Javey, “Direct growth of single crystalline III-V semiconductors on amorphous substrates,” Nature Communications, 7, 10502, 2016.
  7. Weitse Hsu, Mark Hettick, Carolin Sutter-Fella, Lungteng Cheng, Shengwen Chan, Yunfeng Chen, Yuping Zeng, Maxwell Zheng, Hsin-Ping Wang, Chien-Chih Chiang, and Ali Javey, “Electron-Selective TiO2 Contact for Cu(In,Ga)Se2 Solar Cells,” Scientific Report, 5, 16028, 2015.
  8. Yuping Zeng, C.-I Kuo, C. Hsu, M. Nejmzadeh, A. Sachid, R. Kapadia, C. Yeung, E. Y. Chang, C. Hu, A. Javey, “Quantum Well InAs/AlSb/GaSb TFET using HSQ as a mechanical support,” IEEE Transaction of Nanotechnology, pp.580-584, 2015.
  9. M. Tosun, S. Chuang, H. Fang, A. B. Sachid, M. Hettick, Y. Lin, Y. Zeng, A. Javey, "High Gain Inverters Based on WSe2 Complementary Field-Effect Transistors", ACS Nano, 8 (5), 4948–4953, 2014.
  10. Yuping Zeng, Chein-I Kuo, Rehan Kapadia, Chingyi Hsu, Ali Javey, Chenming Hu, “2-D to 3-D tunneling in InAs/AlSb/GaSb quantum well heterojunctions,” Journal of Applied Physics, 114, 024502, 2013.
  11. Valeria Teppati, Y.P. Zeng, O. Ostinelli, C.R. Bolognesi, “Highly-Efficient InP/GaAsSb DHBTs with 62% Power-Added-Efficiency at 40 GHz,” IEEE Electron Device Letters, Vol. 32, No.7, pp.886-888, 2011.
  12. R. Lövblom, R. Flückiger, Y.P. Zeng, O. Ostinelli, A.R. Alt, H. Benedickter, and C.R. Bolognesi, “InP/GaAsSb DHBT with 500 GHz maximum oscillation frequency,” IEEE Electron Device Letters, Vol. 32, No. 5, pp. 629-631, 2011.
  13. Y.P. Zeng, O. Ostinelli, R. Lövblom, and A.R. Alt, H. Benedickter, and C.R. Bolognesi, “400 GHz InP/GaAsSb DHBTs with low-noise microwave performance,” IEEE Electron Device Letters, Vol. 31, No. 10, pp. 1122-1124, 2010.
  14. Y.P. Zeng, R. Lövblom, O. Ostinelli, and C.R. Bolognesi, “(Ga,In)P emitter composition effect on the performance of (Ga,In)P/GaAsSb/InP DHBTs grown by MOCVD,” Physics Status Solidi C, pp. 2490-2493, 2010.
  15. Y.P. Zeng, H. Benedickter, B.R. Wu, C.R. Bolognesi, “Microwave noise characterization of AlInAs/GaAsSb/InP DHBTs,” IEE Electronics Letters, Vol. 45, Issue 23, pp. 1190-1191, Nov 2009.
  16. H.G. Liu, O. Ostinelli, Y.P. Zeng, C.R. Bolognesi, “Emitter-size effects and ultimate scalability of InP:GaInP/GaAsSb/InP DHBTs,” IEEE Electron Device Letters, Vol. 29, Issue 6, pp. 546-548, June 2008.
  17. Y.P. Zeng, O. Ostinelli, H.G. Liu, C.R. Bolognesi, “Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsSb DHBTs,” Solid-State Electronics, Vol. 52, pp. 1202-1206, 2008.
  18. H.G. Liu, O. Ostinelli, Y.P. Zeng, C.R. Bolognesi, “High-current-gain InP/GaInP/GaAsSb/InP DHBTs with fT = 436 GHz,” IEEE Electron Device Letters, Vol. 28, Issue 10, pp. 852-855, October 2007.
  19. H. Liu, O. Ostinelli, Y.P. Zeng, C.R. Bolognesi, “High-gain arsenic-rich n-p-n InP/GaAsSb DHBTs with fT > 420 GHz,” IEEE Transaction on Electron Devices, Vol. 54, Issue 10, pp. 2792-2795, October 2007.
  20. W. Zhou, C.W. Tang, J. Zhu, K.M. Lau, Y.P. Zeng, H.G. Liu, N.G. Tao, C.R. Bolognesi, “Metamorphic heterostructure InP/GaAsSb/InP HBTs on GaAs substrates by MOCVD,” IEEE Electron Device Letters, Vol. 28, Issue 7, pp. 539-542, July 2007.
  21. L.G. Zheng, X. Zhang, Y.P. Zeng, S.P. Watkins, and C.R. Bolognesi, “Demonstration of high-speed staggered lineup GaAsSb/InP uni-traveling carrier photodiodes,” IEEE Photonics Technology Letters, No. 17, Vol. 3, pp. 651-653, 2005.
  22. S.C. Tan, L. Liu, Y.P. Zeng, A. See and Z. X. Shen, “The effect of film thickness on the C40 TiSi2 to C54 TiSi2 transition temperature,” Journal of the Electrochemical Society, 152, 10, G754-G756, 2005.
  23. Y.P. Zeng, Y.F. Lu, Z.X. Shen, J.N. Zeng, W.X. Sun, B.J. Cho, C.H. Poon, “Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon,” Journal of Nanotechnology, No. 15, pp. 658-662, 2004. <
  24. D.C.H. Poon, B.J. Cho, Y.F. Lu, M. Bhat and A. See, “Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation,” Journal of Vacuum Science and Technology B 21(2), pp. 706-709, Mar/Apr 2003.
  25. Y. Liu, J.F. Song, Y.P. Zeng, G.T. Du, “Wide-spectrum high-power 1.55 mum superluminescent light source with non-uniform well-thickness multi-quantum wells,” Chinese Journal of Lasers, Vol. A30 Issue: 2 Pages: 109-112, Feb. 2003.
  26. X.Y. Chen, Y.F. Lu, B.J. Cho, Y.P. Zeng, J.N. Zeng, Y.H. Wu, “Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation,” Applied Physics Letters, Vol. 81, No. 7, pp. 1344-1346, Aug 12, 2002.
  27. Yang Liu, Yuping Zeng, Junfeng Song, Bin Wu, Yuantao Zhang, Guotong Du, “1.5 microns tilted Integrated superluminescent light source,” Proceedings of SPIE, Vol. 4277, pp.396-402, 2001.
  28. Y. Liu, J.F. Song, Y.P. Zeng, B. Wu, Y.T. Zhang, Y. Qian, Y.Z. Sun, G.T. Du, “High power 1.5 μm integrated superluminescent light source with tilted ridge waveguide,” Journal of Optical and Quantum Electronics, Vol. 33, No. 12, pp. 1233-1239, Dec 2001.
  29. Y. Liu, J.F. Song, Y.P. Zeng, B. Wu, Y.T. Zhang, Y. Qian, Y.Z. Sun, G.T. Du, “High-power 1.5 μm InGaAsP/InP strained quantum wells integrated superluminescent light source with tilted structure,” Japanese Journal of Applied Physics, Vol. 40, Issue 6A, pp. 4009-4010, June, 2001.
  30. Y. Liu, J.F. Song, Y.P. Zeng, B. Wu, Y.T. Zhang, Y. Qian, Y.Z. Sun, G.T. Du, “High-power 1.5 μm InGaAsP/InP integrated superluminescent light source,” Chinese Physics Letter, Vol. 18, No. 8, pp. 1074-1077, Aug, 2001.
  31. Y. Liu, J.F. Song, Y.P. Zeng, J.Z. Yin, G.T. Du, “Integrated Superluminescent Light Source with Tilted Structure by Using Ridge Waveguide”, Chinese J. Lasers (中国激光), vol.28, No.9, pp.786-788, 2001.
  32. Liu Yang, Zeng Yuping, Song Junfeng, Guotong Du, InGaAsP/InP integrated superluminescent light source with tilted structure. Chinese J. Lasers (中国激光), 2001, 28(5):412～414 (in Chinese)

Conference Papers

  1. Mohammad Najmzadeh, J.P. Duarte, S. Khandelwal, Y. Zeng, C. Hu, “2D MOSFET operation of a fully-depleted bulk MoS2 at quasi-flatband back-gate”, Device Research Conference, 2015.
  2. Y Zeng, C. Hu, “Fabrication of III-V TFETs”, invited poster, the 4th international conference on Nanoteck and Expo, Dec 1-3, San Francisco, 2014.
  3. Y.P. Zeng, R. Flückiger ,O. Ostinelli, C.R. Bolognesi, “Type-II InP/GaAsxSb1–x DHBTs with simultaneous fT and fMAX > 340 GHz fabricated by contact lithography,” International Conference on Indium Phosphide and Related Materials, pp. 5515950, May 2010.
  4. Y.P. Zeng, R. Lövblom, O. Ostinelli, C.R. Bolognesi, “(Ga In)P emitter composition effect on the performance of (Ga In)P/GaAsSb/InP DHBTs grown by MOCVD,” 36th International Symposium on Compound Semiconductors, pp. 143-144, August 2009.
  5. Y. P. Zeng, O. Ostinelli, R. Lövblom, C. R. Bolognesi, “Influence of emitter doping on DC gain and cut-off frequency in InP/GaAsSb DHBTs,” 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.3-6, Málaga, Spain, May 2009.
  6. C.R. Bolognesi, H.G. Liu, O. Ostinelli, Y.P. Zeng, “Antimonides chase terahertz target,” Compound Semiconductor, Vol. 14, Issue 7, pp. 21-23, August 2008.
  7. C.R. Bolognesi, H.G. Liu, O. Ostinelli, Y.P. Zeng, “Development of ultrahigh-wideband InP/GaAsSb/InP DHBTs,” Solid State Devices and Materials, pp. 160-161, September 2008.
  8. C.R. Bolognesi, H.G. Liu, O. Ostinelli, Y.P. Zeng, “Development of Ultrahigh-Speed InP/GaAsSb/InP DHBTs: Are Terahertz Bandwidth Transistors Realistic?” Microwave Integrated Circuit Conference, pp.107-110, 2008
  9. Y.P. Zeng, O. Ostinelli, H.G. Liu, C.R. Bolognesi, “Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1-x DHBTs,” IEEE Indium Phosphide and Related Materials Conference, pp. 1-3, May 2008.
  10. H.G. Liu, O. Ostinelli, Y.P. Zeng, C.R. Bolognesi, “Emitter size effects and the scalability of GaInP/GaAsSb/InP DHBTs,” IEEE Indium Phosphide and Related Materials Conference, pp.1-3, May 2008.
  11. H.G. Liu, O. Ostinelli, Y.P. Zeng, C.R. Bolognesi, “600 GHz InP/GaAsSb/InP DHBTs grown by MOCVD with a Ga(As Sb) graded-base and fT × BVCEO > 2.5 THz·V at room temperature,” IEEE Int. Electron Device Meeting, pp.667-670, Piscataway NJ USA, December 2007.
  12. H.G. Liu, Y.P. Zeng, O. Ostinelli, C.R. Bolognesi, “Kirk effect in Type-II InP/GaAsSb DHBTs with a Collector doping spike,” 19th International Conference on Indium Phosphide and Related Materials, pp. 409-412, Matsue, Japan, May 2007.
  13. C.R. Bolognesi, H.G. Liu, Y.P. Zeng, O. Ostinelli, “Kirk effect in type-II InP/GaAsSb DHBTs with collector delta-doping,” WOCSDICE 2007 / 31st Workshop on Compound Semiconductors and ICs, pp.367-370, May 2007.
  14. Y.P. Zeng, H. G. Liu, N. G. Tao, C.R. Bolognesi et al, “High performance metamorphic InP/GaAsSb/InP Type-II DHBTs grown on GaAs substrates,” GaAs Mantech, April 24-28, Vancouver, 2006.
  15. Y. Liu, Y.P. Zeng, J.F. Song, J.Z. Yin, Q. Gao, G.T. Du, “Tapered integrated super-luminescence light source with tilted structure,” the 3rd Photonics Conference in China, March 2000.