(a) Professional Preparation
Jilin University Changchun, Jilin, China ,Electrical Engineering, B.Sci., 1998
Jilin University Changchu, Jilin, China,Electrical Engineering, Master's,2001
National University of Singapore,Singapore, Physics, Master's,2004
Swiss Federal Institute of Technology,Zurich, Switzerland, Electrical Engineering,PhD, 2011
UC Berkeley Berkeley, California Electrical Engineering Post-Doc 2011-2016
(b) Appointments
Sept. 2016-present University of Delaware, Assistant Professor
Dec. 2011-May 2016 University of California, Berkeley, Postdoctoral Researcher
Jun. 2006-Aug. 2011 Swiss Federal Institute of Technology, Research Assistant
Sept. 2003-Jun. 2006 Simon Fraser University, Research Assistant
Jul. 2001-Aug. 2003 National University of Singapore, Research Assistant
Sept. 1998-Jul. 2001 Jilin University, Research Assistant
(c) Selected Publications
1. Ching-Yi Hsu, Yuping Zeng, Chen-Yen Chang, Chenming Hu, and Edward Yi Chang, “Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETs,” IEEE Transaction on Electron Devices, Vol. 63, No. 11, pp.4267-4272, 2016.
2. W. Gao, H. Y. Y. Nyein, Z. Shahpar, H. M. Fahad, K. Chen, S. Emaminejad, Y. Gao, L.-C. Tai, H. Ota, E. Wu, J. Bullock, Y. Zeng, D.-H. Lien, A. Javey, "Wearable Microsensor Array for Multiplexed Heavy Metal Monitoring of Body Fluids", ACS Sensors, 1, 866–874, 2016
3. Angada B. Sachid, Mahmut Tosun, Sujay B. Desai, Ching-yi Hsu, Der-Hsien Lien, Surabhi R. Madhvapathy, Yu-Ze Chen, Mark Hettick, Jeong Seuk Kang, Yuping Zeng, Jr-Hau He, Edward Yi Chang, Yu-Lun Chueh, Ali Javey, Chenming Hu, “Monolithic 3D CMOS using Layered Semiconductors,” Advance Materials, 2015
4. Yuping Zeng, Chingyi Hsu, Angada Sachid, Ali Javey, Chenming Hu, “Peak to Valley Current Ratio Engineering of InAs/AlSb/GaSb tunneling diode,” Journal of Engineering, under review, 2017.
5. Kevin Chen, Rehan Kapadia, Audrey Harker, Sujay Desai, Jeong Seuk Kang, Steven Chuang, Mahmut Tosun, Carolin Sutter Fella, Michael Tsang, Yuping Zeng, Daisuke Kiriya, Jubin Hazra, Surabhi Rao Madhvapathy, Mark Hettick, Yu-Ze Chen, James Mastandrea, Matin Amani, Stefano Cabrini, Yu-Lun Chueh, Joel Ager, Daryl Chrzan, Ali Javey, “Direct growth of single crystalline III-V semiconductors on amorphous substrates,” Nature Communications, 7, 10502, 2016.
6. Yuping Zeng, C.-I Kuo, C. Hsu, M. Nejmzadeh, A. Sachid, R. Kapadia, C. Yeung, E. Y. Chang, C. Hu, A. Javey, “Quantum Well InAs/AlSb/GaSb TFET using HSQ as a mechanical support,” IEEE Transaction of Nanotechnology, pp.580-584, 2015.
7. Yuping Zeng, Chein-I Kuo, Rehan Kapadia, Chingyi Hsu, Ali Javey, Chenming Hu, “2-D to 3-D tunneling in InAs/AlSb/GaSb quantum well heterojunctions,” Journal of Applied Physics, 114, 024502, 2013.
8. Valeria Teppati, Y.P. Zeng, O. Ostinelli, C.R. Bolognesi, “Highly-Efficient InP/GaAsSb DHBTs with 62% Power-Added-Efficiency at 40 GHz,” IEEE Electron Device Letters, Vol. 32, No.7, pp.886-888, 2010.
9. Y.P. Zeng, O. Ostinelli, R. Lövblom, and A.R. Alt, H. Benedickter, and C.R. Bolognesi, “400 GHz InP/GaAsSb DHBTs with low-noise microwave performance,” IEEE Electron Device Letters, Vol. 31, No. 10, pp. 1122-1124, 2010.
10. Y.P. Zeng, R. Lövblom, O. Ostinelli, and C.R. Bolognesi, “(Ga,In)P emitter composition effect on the performance of (Ga,In)P/GaAsSb/InP DHBTs grown by MOCVD,” Physics Status Solidi C, pp. 2490-2493, 2010.
11. Y.P. Zeng, H. Benedickter, B.R. Wu, C.R. Bolognesi, “Microwave noise characterization of AlInAs/GaAsSb/InP DHBTs,” IEE Electronics Letters, Vol. 45, Issue 23, pp. 1190-1191, Nov 2009.
12. Y.P. Zeng, O. Ostinelli, H.G. Liu, C.R. Bolognesi, “Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsSb DHBTs,” Solid-State Electronics, Vol. 52, pp. 1202-1206, 2008.
13. Y.P. Zeng, Y.F. Lu, Z.X. Shen, J.N. Zeng, W.X. Sun, B.J. Cho, C.H. Poon, “Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon,” Journal of Nanotechnology, No. 15, pp. 658-662, 2004.
Seven other selected conference publications
1. Mohammad Najmzadeh, J.P. Duarte, S. Khandelwal, Y. Zeng, C. Hu, “2D MOSFET operation of a fully-depleted bulk MoS2 at quasi-flatband back-gate”, Device Research Conference, 2015.
2. Y Zeng, C. Hu, “Fabrication of III-V TFETs”, invited poster, the 4th international conference on Nanoteck and Expo, Dec 1-3, San Francisco, 2014.
3. Y.P. Zeng, R. Flückiger ,O. Ostinelli, C.R. Bolognesi, “Type-II InP/GaAsxSb1–x DHBTs with simultaneous fT and fMAX > 340 GHz fabricated by contact lithography,” International Conference on Indium Phosphide and Related Materials, pp. 5515950, May 2010.
4. Y.P. Zeng, R. Lövblom, O. Ostinelli, C.R. Bolognesi, “(Ga In)P emitter composition effect on the performance of (Ga In)P/GaAsSb/InP DHBTs grown by MOCVD,” 36th International Symposium on Compound Semiconductors, pp. 143-144, August 2009.
5. Y. P. Zeng, O. Ostinelli, R. Lövblom, C. R. Bolognesi, “Influence of emitter doping on DC gain and cut-off frequency in InP/GaAsSb DHBTs,” 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.3-6, Málaga, Spain, May 2009.
6. Y.P. Zeng, O. Ostinelli, H.G. Liu, C.R. Bolognesi, “Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1-x DHBTs,” IEEE Indium Phosphide and Related Materials Conference, pp. 1-3, May 2008.
7. Y.P. Zeng, H. G. Liu, N. G. Tao, C.R. Bolognesi et al, “High performance metamorphic InP/GaAsSb/InP Type-II DHBTs grown on GaAs substrates,” Compound Semiconductor Mantech, April 24-28, Vancouver, 2006.
(d) Synergistic Activities:
Reviewer for the following publications: IET Electronic Letters, Applied Physics Letters, Micro and Nano letters, Journal of Materials Science in Semiconductor Processing, Arabian Journal for Science and Engineering, Journal of Applied Physics, Journal of Vacuum Science and Technology B, Journal of Microelectronics and Electronic Packaging, IEEE Electron Device Letters.