Materials
Science and Engineering B
Volume
11, Issues 1-4 , 15 January 1992, Pages 43-46
doi:10.1016/0921-5107(92)90187-E 
Cite or link using doi
Copyright © 1992 Published by Elsevier Science B.V.
Interdiffusion in amorphous Si/SiC multilayers
J. Kolodzey*,
P. Hanesch, T. Fischer and R. Schwarz
G. Zorn and H. Göbel
Physik-Department E16, Technische
Universität München, W-8046, Garching, F.R.G.
Corp. Res. Tech., Siemens AG.,
W-8000, Munich, F.R.G.
Available online 23 January 2003.
Abstract
Measurements are reported of the interdiffusion coefficient D of
hydrogenated amorphous Si---C (a-Si1-Cx:H) films
using X-ray diffraction to monitor the time dependence of the decrease in
composition modulation in annealed multilayers. For a multilayer with a carbon
fraction of 0.38 the diffusion coefficient is below 10-18
cm2 s-1 in the temperature range from 550 to 650°C with an
activation energy of 1.43 eV. The crystallization temperature is above 925°C.
*
Present address: Department of Electrical Engineering, University of Delaware,
140 Evans Hall, Newark, DE 19716, U.S.A.
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