ELEG 667- Nanoelectronic Device Principles Schedule (revised
11-Feb-03) Spring
2003
Instructor: James Kolodzey
Week |
Date |
Topic |
Reading (not updated)* |
1 |
Tu 2/11 |
Introduction to Nanoelectronics |
notes |
|
|
Semiconductor bands & bonds |
M&K 1.1, 1,2, 1.3 |
2 |
Tu 2/18 |
Charge carriers |
2.8, 2.9, 3.1, 3.2 |
|
|
Transport and Recombination |
4.1, 5.1, 5.2 |
3 |
Tu 2/25 |
Quantum wires and dots |
- |
|
|
P-N junctions |
3.3, 4.2, 4.3 |
4 |
Tu 3/4 |
Diode equation |
3.3, 4.2, 4.3 |
|
|
Junction dynamics and contacts |
4.4, 5.3 |
5 |
Tu 3/11 |
Heterojunctions |
- |
|
|
Molecular Electronics |
3.5, 3.6 |
6 |
Tu 3/18 |
Nanostructures |
- |
|
|
Bipolar junction transistor |
6.1, 6.2 |
7 |
Tu 3/25 |
BJT terminal currents |
6.3 |
|
|
Ebers-Moll equations |
6.4, 6.5 |
|
|
Spring Break |
March 31 - April 4 |
8 |
Tu 4/8 |
Mid Term Quiz - 210 Evans 11am-12pm |
all prior topics |
|
|
Polymer electronics |
Guest lecture?? |
9 |
Tu 4/15 |
BJT simulations |
7.1, 7.2, 7.3, 7.7 |
|
|
junction field effect transistor |
4.5 |
10 |
Tu 4/22 |
JFET (cont.), MESFET, HEMT |
8.1 |
|
|
The MOS capacitor & threshold voltage |
8.2, 8.3, 8.4, 8.5, 8.6 |
11 |
Tu 4/29 |
Metal-insulator-semiconductor FET |
- |
|
|
MOS transistor currents |
9.1, 9.2 |
12 |
Tu 5/6 |
Nanoscale MOSFET scaling |
10.2, 10.3, 10.4, 10.5, 10.6 |
|
|
Polymer electronics |
|
13 |
Tu 5/13 |
Spintronics |
Guest lecture |
|
|
Optical Properties |
Streetman, 6.3, 6.4, 10 |
14 |
Tu 5/20 |
Microwave devices - last class |
Streetman, 12.1, 12.2 |
|
Th 5/22 |
review |
|
|
|
|
|
*Texts:
(a) Richard S. Muller (Univ. of California, Berkeley) and Theodore I. Kamins (Hewlett-Packard Laboratories, Palo Alto, California) J. Wiley & Sons, 1986, Device Electronics for Integrated Circuits, 2nd Ed.,
(b) to be determined on Nanoelectronics: e.g.
K. Eric Drexler, Nanosystems: molecular machinery, manufacturing, and computation;
or John H. Davies, The physics of low-dimensional semiconductors : an introduction;
or Supriyo Datta, Electronic Transport in Mesoscopic Systems
Reading assignments should be read before class discussion.
Grading: Final grade will be based on: 25 % for midterm exam, 30 % for homework, 10 % for course project and 35 % for the final exam.
Exams: All exams will be closed book, based on class notes, homework and reading and assignments from text.
Homework: Will be assigned weekly, no late homework
accepted. Homework assignments will be posted on the course website at: :
http://www.ece.udel.edu/~kolodzey/courses/eleg667s03.htm
Course Project: Design, draw, analyze and explain your own idea for a new type of electronic device. Grading criteria will be based on originality and the soundness of analysis. Fabrication limitations using present techniques will not detract from grade. A short report (2-3 pages) is due on May 20, 2003.