ELEG 646, ELEG 446 - Nanoelectronic Device Principles – Spring 2005
Schedule (revised 8-Feb-05)
Instructor: James Kolodzey
|
Week
|
Date
|
Topic
|
Reading Assignment
|
|
1
|
Tu 2/8
|
Introduction to semiconductor electronics
|
M&K 1.1
|
|
|
|
Semiconductor bands & bonds
|
M&K 1.1
|
|
2
|
Tu 2/15
|
Majority and minority carriers
|
M&K 1.2
|
|
|
|
Density of States
|
1.3, 2.10, 3.1
|
|
3
|
Tu 2/22
|
Fermi Dirac function and Dopants
|
1.3, 2.10, 3.1
|
|
|
|
Continuity, Drift and Diffusion
|
4.1, 5.1
|
|
4
|
Tu 3/1
|
Generation, Recombination
|
5.2
|
|
|
|
Schottky junctions
|
3.2, 3.4
|
|
5
|
Tu 3/8
|
P-N junctions
|
4.2, 4.3
|
|
|
|
Diode equation
|
3.3, 5.3, 3.6
|
|
6
|
Tu 3/15
|
Reverse bias and breakdown
|
4.3
|
|
|
|
Junction dynamics and contacts
|
5.4, 4.4
|
|
7
|
Tu 3/22
|
Heterojunctions, Nanostructures
|
5.3
|
|
|
Tu 3/24
|
Mid Term Quiz - location to be determined
|
all prior topics
|
|
|
Tu 3/29 |
Spring Break
|
March 28 - April 1
|
|
8
|
Tu 4/5
|
Bipolar junction transistor
|
6.1, 6.2
|
|
|
|
BJT currents
|
6.3
|
|
9
|
Tu 4/12
|
Ebers-Moll model
|
6.4, 6.5
|
|
|
|
Device & BJT simulations
|
2.9, 5.5, 7.1, 7.2, 7.3, 7.7
|
|
10
|
Tu 4/19
|
Heterojunction bipolar transistor, speed
|
6.6, 7.6
|
|
|
|
junction FET, MESFET, HEMT
|
4.5, 8.1
|
|
11
|
Tu 4/26
|
The MOS capacitor & threshold voltage
|
8.2, 8.3, 8.4, 8.5, 8.6
|
|
|
|
Metal-insulator-semiconductor FET
|
|
|
12
|
Tu 5/3
|
MOS transistor currents
|
9.1, 9.2
|
|
|
|
Nanoscale MOSFET scaling
|
10.2, 10.3, 10.4, 10.5, 10.6
|
|
13
|
Tu 5/10
|
Microwave devices
|
B.G. Streetman
|
|
|
|
Optical Devices
|
B.G. Streetman
|
|
14
|
Tu 5/17
|
Nanoelectronics (spin, polymers) - last class
|
|
|
|
Th 5/19
|
reading day
|
|
|
|
|
|
|
Teaching Assistant: Mr. Biqin Huang
Text:
Richard S. Muller (Univ. of California, Berkeley) and Theodore I. Kamins (Hewlett-Packard Laboratories, Palo Alto, California) with Mansun Chan, J. Wiley & Sons, 2003, Device Electronics for Integrated Circuits, 3rd Ed., ISBN 0-471-59398-2
Reading assignments should be read before class discussion.
Grading: Final grade will be based on: 25 % for midterm exam, 35 % for homework, 5 % for course project and 35 % for the final exam.
Exams: All exams will be based on class notes, homework and reading and assignments from text; closed book.
Homework: Will be assigned weekly, no late
homework accepted. Homework assignments will be posted on the course website
at: :http://www.ece.udel.edu/~kolodzey/courses/eleg646s05.html
Course Project: To be determined and announced
in class. Either a simulation using device process software, or,
a design study. A short report (2-3 pages) will due on Tuesday May 3, 2005.