1. Calculate the threshold voltage of an nMOS transistor with an Al metal gate, gate oxide thickness of 20 nm, and p-type substrate acceptor doping concentration of 1 E 17 cm^-3. Let the net oxide trapped charge be Qox/q = 1 E 10 cm^-2. This device will be similar to our EE 650 transistor.

2. Submit a logic diagram of a simple circuit (e.g. NAND/NOR) with truth table and logic symbols.
(no transistor diagram is needed in this assignment). Give 1 or 2 sentences why you chose this circuit.

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