ELEG 450/650 Integrated Circuit Design and Fabrication
Homework #13 - due Wednesday, 16 May, 2001

1. Determine the SiO2 thicknesses obtained after: 60 min dry oxidation of
(100)-oriented Si at 1100 C;
the initial condition is the 1.2 micron of oxide that was formed after previous dry and wet steps as we calcualted in class.

2. Determine the SiO2 thicknesses obtained after: 6 hours of dry oxidation of
Si (100)-oriented at 1100 C; the initial conidition is dox = 0. Compare your calculations to the graphs in the text(and give this graphical value).

3. Calculate the propagation delay through two CMOS NAND gates in series, using the method derived in class.
Assume that the NAND gates are built with ELEG 650 design rules.
Hint: the next homwork assignment will be to determine this result using the SUPREM process modeling software.

For proper credit, include the course number, assignment number, and
due date and your name on your submission.