Electroluminescence emission
with peak intensity at a frequency of 9 TeraHertz (33.3 mm) from a source based on silicon germanium
layers grown by molecular beam epitaxy at the University of Delaware by the
Kolodzey Group (November, 2001).
Electroluminescence emission
with peak intensity at a frequency of 9 TeraHertz (33.3 mm) from a source based on silicon germanium
layers grown by molecular beam epitaxy at the University of Delaware by the
Kolodzey Group (November, 2001).