ELEG 450/650 Integrated Circuit Design and Fabrication
Homework #11 - due Monday, 6 May 2002

1. Submit a set of corrected L-Edit plots of your CMOS circuit project.
Make the following improvements:

a) include I/O and power contact pads with area about 200 microns x 200 microns

b) add a 2nd series of alignment marks, such as nested “L” shapes

c) use a 40:1 plot scale factor (i.e. the plotted size of 4 l = 4 x 7.5 micron x 40)

d) add body contacts to the n substrate, and to the p well

e) connect all p wells together so that a single p-well body contact may be used


Include the following mask levels:


1. A composite (all layer) plot of your circuit (use translucent fill patterns so the reader can evaluate details)
2. Individual separate black/white (no color or fill) plots for each mask level:
a. p diffusion (pMOS S/D and p-well/tub for nMOS)
b. n diffusion (nMOS S/D )
c. gate oxide (for p and n) include cuts and substrate
d. contact cuts and substrate
e. metalization (gate, S, D) - image reversed

Use lambda = 7.5 microns, so the transistor active channels (same for p and n) will have Z = 150 microns and L = 30 microns.

Include alignment marks on each mask level and body contacts on the substrate and on each well.

It is heartily suggested to join all p wells.

Note that ELEG 450/650 uses no poly and only 1 metal level.

If you need to cross signal lines, use diffusion as an underpass.
For full credit include the circuit schematic, logic gate diagram, Boolean expression and the truth table.

 

2. Do the SUPREM simulation of following the web hints at the course website under:

“SUPREM process modeling, April 2002 software Site”

Follow directions for simulating and plotting, and submit the oxide thickness plot that you generate for a 2 hour wet oxidation.

(note - run the simulation yourself, do not submit a copy of the example from the Stanford site)

To change the oxidation time and temperature, edit the following line:

“diffuse time=100 temp=1000 weto2 cont”

where time is in  minutes and temperature is in C.

For example, to perform a 2 hour oxidation, use:

diffuse time=120 temp=1000 weto2 cont

 

 

 

Homework assignments will appear on the web at:   http://www.ece.udel.edu/~kolodzey/

Note: On each homework and report submission, give your name,
due date, assignment number and the course number.