ELEG 646; ELEG 446 - Nanoelectronic Device PrinciplesSpring 2007

Homework #10 - due Tuesday, 1 May 2007, in class

1.  Problem 6.14 (a) in chapter 6 of Muller & Kamins, p.322 in 3rd edition. Hint: use a simplified Ebers Moll model in which a current generator qG is in parallel with the current generator: (alphaF*IF)

2.  Consider a pnp bipolar transistor biased so that the emitter is shorted to the base, and the base collector is reverse biased with voltage VBC. Use the Ebers Moll model with deltaPE and deltaPC to find the currents IE, IC, and IB in terms of standard parameters: IES, ICS, alphaN and alphaI. Sketch the hole concentration in the base and indicate values for pn(0) and pn(Wb).

3.  Problem 7.1 in chapter 7 of Muller & Kamins, p. 375 in 3rd edition. Hint: for an npn transistor, use Eqns 7.1.1 with constant base doping, and 7.1.3, and 7.1.4.

4.  Problem 4.16 (a) only in chapter 4 of Muller & Kamins, p. 225 in 3rd edition. Hint: This means calculate VT in terms of the built-in voltage, phibi, doping gradient a, and width d.
 

  Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s07.html
  Note: On each homework and report submission, please give your name, the due date, assignment number and the course number. For full credit - include units/dimensions for all numerical quantities