Special Project I - due Monday, 23 April 2007, at noon

1.  Design a Si pn diode to operate at the highest possible frequency. Estimate the bulk series resistance from rho L/A and assume that the contacts have a specific resistivity of 1E-6 Ohm-cm2 versus the top contact area (i.e. the contacts will have significant resistance if they are too small in surface area). For the capacitance, assume depletion only (i.e. the operation is reverse bias). Use any standard material processing with realistic permittivity, mobility and doping and assume room temperature operation. Assume a one sided step junction if you wish (maybe easier). Select the material parameters, doping and size. Show all work. An award will be given to the person with the highest frequency.
 
 

  Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/courses/eleg646s07.html
  Note: On each homework and report submission, please give your name, the due date, assignment number and the course number. For full credit - include units/dimensions for all numerical quantities