ELEG 646, ELEG 667 – 011, ELEG 467 – 011 - Nanoelectronic Device Principles – Spring 2004
Schedule (revised 6-Apr-04)
Instructor: James Kolodzey
Week
|
Date
|
Topic
|
Reading (not updated)*
|
1
|
Tu 2/10
|
Introduction to semiconductor electronics
|
|
|
|
Semiconductor bands & bonds
|
M&K 1.1
|
2
|
Tu 2/17
|
Majority and minority carriers
|
M&K 1.2
|
|
|
Density of States
|
1.3, 2.10, 3.1
|
3
|
Tu 2/24
|
Fermi Dirac function and Dopants
|
1.3, 2.10, 3.1
|
|
|
Continuity, Drift and Diffusion
|
4.1, 5.1
|
4
|
Tu 3/2
|
Generation, Recombination
|
5.2
|
|
|
Shockley Read Hall recombination
|
5.2
|
5
|
Tu 3/9
|
P-N junctions
|
4.2, 4.3
|
|
|
Diode equation
|
3.3, 5.3, 3.6
|
6
|
Tu 3/16
|
Junction dynamics and contacts
|
5.4, 4.4
|
|
|
Heterojunctions, Nanostructures
|
5.3
|
7
|
Tu 3/23
|
Spring Break
|
March 22 - 29
|
|
Tu 3/30
|
Junction Breakdown
|
4.4
|
|
Schottky junctions
|
3.2, 3.4
|
|
8
|
Tu 4/6
|
review
|
all prior topics
|
|
|
Mid Term Quiz - 114 Spencer 9:30am
|
all prior topics
|
9
|
Tu 4/13
|
Bipolar junction transistor, BJT currents
|
6.1, 6.2, 6.3
|
|
|
Ebers-Moll model
|
6.4, 6.5
|
10
|
Tu 4/20
|
Device & BJT simulations
|
2.9, 5.5, 7.1, 7.2, 7.3, 7.7
|
|
|
Heterojunction bipolar transistor, speed
|
6.6, 7.6
|
11
|
Tu 4/27
|
junction FET, MESFET, HEMT
|
4.5, 8.1
|
|
|
The MOS capacitor & threshold voltage
|
8.2, 8.3, 8.4, 8.5, 8.6
|
12
|
Tu 5/4
|
Metal-insulator-semiconductor FET
|
9.1
|
|
|
MOS transistor currents
|
9.1, 9.2
|
13
|
Tu 5/11
|
Nanoscale MOSFET scaling
|
10.2, 10.3, 10.4, 10.5, 10.6
|
|
|
Polymer electronics; Spintronics
|
5.6, Streetman, 6.3, 6.4, 10
|
14
|
Tu 5/18
|
Optical & Microwave devices - last class
|
Streetman,6.3, 6.4, 10, 12
|
|
Th 5/20
|
review
|
|
|
|
|
|
*Texts:
(a) Richard S. Muller (Univ. of California, Berkeley) and Theodore I. Kamins (Hewlett-Packard Laboratories, Palo Alto, California) with Mansun Chan, J. Wiley & Sons, 2003, Device Electronics for Integrated Circuits, 3rd Ed., ISBN 0-471-59398-2
(b) to be determined on Nanoelectronics: e.g.
K. Eric Drexler, Nanosystems:molecular machinery, manufacturing, and computation;
or John H. Davies, The physics of low-dimensional semiconductors : an introduction;
or Supriyo Datta, Electronic Transport in Mesoscopic Systems
Reading assignments should be read before class discussion.
Grading: Final grade will be based on: 25 % for midterm exam, 30 % for homework, 10 % for course project and 35 % for the final exam.
Exams: All exams will be based on class notes, homework and reading and assignments from text; closed book.
Homework: Will be assigned weekly, no late
homework accepted. Homework assignments will be posted on the course website
at: :http://www.ece.udel.edu/~kolodzey/courses/eleg646s04.html
Course Project: Design, draw, analyze and explain
your own idea for a new type of electronic device. Grading criteria
will be based on originality and the soundness of analysis. Fabrication
limitations using present techniques will not detract from grade. A short
report (2-3 pages) is due on Tuesday May 11 2003.