ELEG 646, ELEG 667 – 011, ELEG 467 – 011 - Nanoelectronic Device Principles – Spring 2004

Homework #6 - due 12 noon (else marked late), Wednesday, 7 April 2004.

1. Calculate the values of depletion and diffusion capacitance for a Si p⁺-n junction with N_A = 5E18 cm^-3, and N_D = 1E17 cm^-3 , respectively, at the forward bias V_F = 0.7 volts.  The junction area is 100 microns x 100 microns.

 

2. Problem 5.10 [part (a) only] in chapter 5, Muller & Kamins, p.275 in 3rd edition. Hint: junction at x=0.

 

Homework assignments will appear on the web at:  http://www.ece.udel.edu/~kolodzey/courses/ELEG646S04/646homeworkidx.html

Note: On each homework and report submission, please give your:
name,
due date,
assignment number, and
course number.