1.
Calculate the threshold voltage of an nMOS transistor with an Al metal
gate, gate oxide thickness of 20 nm, and p-type substrate
acceptor doping concentration of 1 E 17 cm^-3. Let the net oxide trapped charge
be Qox/q = 1 E 10 cm^-2. This device will be similar to our EE 650 transistor.
2.
Submit a logic diagram of a simple circuit (e.g. NAND/NOR) with truth table
and logic symbols.
(no transistor diagram is needed in this assignment).
Give 1 or 2 sentences why you chose this circuit.
See Graphics Layout Editors Site website for printing hints.
Homework assignments will appear on the web at: http://www.ece.udel.edu/~kolodzey/.
Note:
On each homework and report submission, give your name,
the due
date, assignment number and the course.