2. Determine the
SiO2 thicknesses obtained after: 6 hours of dry
oxidation of
Si (100)-oriented at 1100 C; the initial conidition is dox = 0.
Compare your calculations to the graphs in the text(and give this graphical value).
3. Calculate the propagation delay through two CMOS NAND gates in series,
using the method derived in class.
Assume that the NAND gates are built with
ELEG 650 design rules.
Hint: the next homwork assignment will be to determine this result using the SUPREM
process modeling software.
For proper credit, include the course number, assignment number, and
due
date and your name on your submission.