Subject:
running SUPREM (Stanford University Process Engineering Modeling) software
Date: Tue,
8 May 2001 16:00:33 –0400 From: Gary
Katulka
Here are
some brief instructions to get started.
1. check
out the Stanford University website to access Suprem
model
examples and for gaining practice/experience with the code.
Stanford
Univ. Website:
http://www-tcad.stanford.edu
A full version
of the Suprem operators manual resides at this website under the
hotbuttons,
"TOOLS" then "SUPREM3."
This is a
big file so avoid printing it out.
2. log on to the eecis UNIX computers
3. to access SUPREM4, go to the
directory: /usr/local/suprem/rel.9130
4. at the prompt, type, "suprem"
5. copy the TEXT exactly as shown in the
examples below and paste it in
front of
the "SUPREM4" prompt. Note
that the SUPREM prompt will return after each line.
Continue
entering line by line.
The Suprem
code will begin calculating instantly. (Hint:
when finished, exit by typing “quit” )
#x
dimension
line x
loc=0.0 spacing=0.2 tag=left
line x
loc=1.0 spacing=0.05
line x
loc=2.0 spacing=0.2 tag=right
#y
dimension
line y
loc=0.0 tag=top
line y
loc=1.0 tag=bottom
#silicon
region
silicon xlo=left xhi=right ylo=top yhi=bottom
#exposed
surface
bound
exposed xlo=left xhi=right ylo=top yhi=top
#Comment Start with <100> Silicon, p doped to
20 ohm resistivity.
initialize boron conc=9.0e14 ori=100
#oxide
orient=100 wet lin.h.0=2.428e6
lin.l.0=2.793e4
#suprem
iv default coefficients
boron
silicon Dix.0=0.37 Dip.0=0.72 Dix.E=3.46 Dip.E=3.46
arsenic
silicon Dix.0=8.0 Dim.0=12.8 Dix.E=4.05 Dim.E=4.05
#Comment Pad Oxidation.
#method
compress init=1.0e-3
diffuse
time=90 temp=1100 weto2
quit
Check the
final oxide thickness and Si consumed thickness
with the
values in the plots from the Stanford website.
To do
this you
will have to go to the "TOOLS" hotbutton then the "SUPREM IV
GS"
hotbutton. The choose the "EXAMPLES"
hotbutton, and pick examples such as:
18, "CIS BiCMOS LOCOS Simulation."
Compare
your SUPREM values with values from tables in the text.