ELEG 340 COURSE OUTLINE

ELEG 340 COURSE OUTLINE SPRING 1999

Instructor: James Kolodzey

Meeting Date Topic Reading Assignment*

1 W 2-10 Introduction to the course

2 F 2-12 Semiconductors, crystal structure 1.1, 1.2

3 M 2-15 Bonding forces, energy bands 3.1

4 W 2-17 Charge carriers in semiconductors 3.2

5 F 2-19 Fermi statistics, carrier concentrations 3.3

6 M 2-22 Conductivity, mobility, drift of carriers 3.4.1, 3.4.2

        7                     W 2-24             Temperature and impurity concentration             3.4.3-3.4.5
                                                        effects, Hall effect
        8                      F 2-26               Optical Absorption and luminescence                 4.1, 4.2

9 M 3-1 Recombination and generation 4.3.1, 4.3.2

10 W 3-3 Steady state carrier generation, the 4.3.3, 4.3.4

quasi-Fermi level, photoconductivty

11 F 3-5 Diffusion of carriers 4.4.1, 4.4.2

        12                    M 3-8              Diffusion of carriers (cont.), the continuity             4.4.3, 4.4.4
                                                                        equation
         13                    W 3-10             Haynes- Shockley experiment                                 4.4.5

14 F 3-12 Movie (Haynes-Shockley experiment)

15 M 3-15 Review

HOUR EXAM #1 W 3-17 (Chapters 1, 3, & 4)

16 F 3-19 Introduction to P-N junctions 5.1

17 M 3-22 P-N junction in equilibrium 5.2.1, 5.2.2

18 W 3-24 P-N junctions (cont.), space charge 5.2.3

19 F 3-26 Junction Current Flow, Carrier injection 5.3.1, 5.3.2

SPRING BREAK

        20                     M 4-5             Diode equation, majority and minority                         5.3.2, 5.3.3
                                                                        currents
         21                     W 4-7             Reverse breakdown                                                       5.4

22 F 4-9 Junction capacitance 5.5.3

23 M 4-12 Metal semiconductor junctions 5.7

        24                     W 4-14         Introduction to the bipolar junction                                7.1, 7.2
                                                                        transistor
        25                     F 4-16         Minority carrier distribution, terminal                            7.4
                                                                        currents
        26                     M 4-19         Terminal currents (cont.)                                               7.4.3, 7.4.4

27 W 4-21 Ebers-Moll equations 7.5

28 F 4-23 Cutoff and saturation 7.6.1, 7.62

29 M 4-26 Review

HOUR EXAM #2 W 4-28 (Chapters 5 & 7)

30 F 4-30 The junction field effect transistor 8.1

        31                     M 5-3         Junction FET (cont.), metal-semiconductor                     8.1.3, 8.2
                                                        FET
        32                     W 5-5            Metal-insulator-semiconductor FET                             8.3.1

33 F 5-7 Ideal MOS capacitor 8.3.2

34 M 5-10 MOS threshold voltage 8.3.3, 8.3.4

35 W 5-12 MOS transistor 8.3.5

36 F 5-14 Integrated circuits 9.1

37 M 5-17 IC fabrication 9.2, 9.3

38 W 5-19 Review

Text: B.G. Streetman, Solid State Electronic Devices, fourth edition. Reading assignments should be read before class discussion.

Grading: Final grade will be based on a total of 500 points: 200 pts. For 2 hourly exams, 100 pts. For homework, and 200 pts for the final exam.

Exams: All exams will be closed book with one handwritten page of notes allowed, (2 pages for final exam) multiple choice, based on homework and assignments in text, Solid State Electronic Devices, by Streetman, fourth edition.

Homework: Will be assigned weekly, no late homework accepted. Homework solutions will be posted in Evans Hall, in the 2 nd floor display cases.

Last Updated January 25, 2001